Extending the luminescence properties of zinc gallogermanate via co-doping with cost-effective metals ions (Cr3+/Mg2+, Cr3+/Ca2+, and Cr3+/Sr2+)

نویسندگان

چکیده

The huge applications of red-light-emitting materials paying the research attention to reduce cost production and raw materials. Therefore, abundant cations alkaline-earth metals, e.g., Mg2+, Ca2+, Sr2+ were successfully incorporated with Cr3+: Zn3Ga2Ge2O10 (Cr-ZGGO) as co-activators via simple solid-state method. X-ray diffraction results all samples confirmed formation zinc gallogermanate superstructure two cubic phases ZnGa2O4 Zn2GeO4. particle imaging Cr-ZGGO Ca@Cr-ZGGO field emission scanning electron microscopy reveals a significant change in morphology size by Ca2+ co-doping. Meanwhile, energy dispersive spectroscopic analysis mapping techniques elucidate exact chemical composition calculated stoichiometric substitution illustrate equal distribution elements over whole sample. Optical bandgap co-doped phosphors are lower than Cr-ZGGO. Sr@Cr-ZGGO displays most intense photoluminescence peak broadest near-infrared region result increasing light traps generation new paths between levels trapping centers.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Luminescence Properties of Oxyfluoride Glass and Glass Ceramic Doped with Y3 + Ions

 Oxyfluoride glass ceramics containing CaF2nano-crystals doped with Y3+ ions were prepared by one-step crystallization of SiO2- Al2O3- CaO- CaF2 glasses at different temperatures. X- ray diffraction (XRD) results have revealed that CaF2 was the only precipitated crystalline phase in glass ceramic samples. According to the XRD results, a glass ceramic was selected as the best sample in order to ...

متن کامل

Spectroscopic properties of Fe3+ in GGG and the effect of co-doping with rare-earth ions

The spectroscopic properties of Fe3+ in tetrahedral d-sites of GGG and the effect of co-doping with ~ m 3 + are investigated. It is thus shown that a very efficient energy transfer from ~ e 3 + (d) to ~ m ~ + takes place due to a good superposition of Fe emission and Tm 3 ~ 6 > 3 ~ 4 absorption spectra and due to a favorable packing of the d-sites around the dodecahedral site occupied by Tm. It...

متن کامل

the evaluation of language related engagment and task related engagment with the purpose of investigating the effect of metatalk and task typology

abstract while task-based instruction is considered as the most effective way to learn a language in the related literature, it is oversimplified on various grounds. different variables may affect how students are engaged with not only the language but also with the task itself. the present study was conducted to investigate language and task related engagement on the basis of the task typolog...

15 صفحه اول

The Influence of Doping with Transition Metal Ions on the Structure and Magnetic Properties of Zinc Oxide Thin Films

Zn1-x Ni x O (x = 0.03 ÷ 0.10) and Zn1-x Fe x O (x = 0.03 ÷ 0.15) thin films were synthesized by sol-gel method. The structure and the surface morphology of zinc oxide thin films doped with transition metal (TM) ions have been investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). The magnetic studies were done using vibrating sample magnetometer (VSM) at room temperature. E...

متن کامل

investigation of the electronic properties of carbon and iii-v nanotubes

boron nitride semiconducting zigzag swcnt, $b_{cb}$$n_{cn}$$c_{1-cb-cn}$, as a potential candidate for making nanoelectronic devices was examined. in contrast to the previous dft calculations, wherein just one boron and nitrogen doping configuration have been considered, here for the average over all possible configurations, density of states (dos) was calculated in terms of boron and nitrogen ...

15 صفحه اول

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Journal of Materials Science: Materials in Electronics

سال: 2021

ISSN: ['1573-482X', '0957-4522']

DOI: https://doi.org/10.1007/s10854-021-05650-x